cystech electronics corp. spec. no. : c896q8 issued date : 2013.07.05 revised date : 2013.11.07 page no. : 1/9 MTEF1P15Q8 cystek product specification p-channel enhancement mode power mosfet MTEF1P15Q8 bv dss -150v i d -1.6a r dson @v gs =-10v, i d =-1.6a 650m (typ) r dson @v gs =-6v, i d =-1a 700m (typ) features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free and halogen-free package equivalent circuit outline ordering information device package shipping MTEF1P15Q8-0-t3-g sop-8 (pb-free lead plating and halogen-free package) 2500 pcs / tape & reel MTEF1P15Q8 sop-8 g gate s source d drain environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pc s / tape & reel, 13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c896q8 issued date : 2013.07.05 revised date : 2013.11.07 page no. : 2/9 MTEF1P15Q8 cystek product specification absolute maximum ratings (t c =25 c, unless otherwise noted) parameter symbol limits unit drain-source breakdown voltage bv dss -150 v gate-source voltage v gs 20 v continuous drain current @t a =25 c i d -1.6 a continuous drain current @t a =70 c i d -1.3 a pulsed drain current (note 1) i dm -6.4 a t a =25 c 3.1 w power dissipation (note 2) t a =70 c p d 2 w operating junction and storage temp erature range tj ; tstg -55~+150 c note : 1.pulse width limited by maximum junction temperature. 2. surface mounted on 1 in2 copper pad of fr-4 board, t 10s. thermal resistance ratings thermal resistance symbol maximum unit junction-to-case r jc 30 junction-to-ambient (note) r ja 40 c / w note : w when mounted on a 1 in 2 pad of 2 oz copper, t 10s; 125 c c/w when mounted on minimum copper pad. electrical characteristics (tc=25 c, unless otherwise noted) symbol min. typ. max. unit test conditions static bv dss -150 - - v gs =0v, i d =-250 a v gs(th) -2 -2.8 -3.5 v v ds =v gs , i d =-250 a i gss - - 100 na v gs =20v, v ds =0v i dss - - -1 v ds =-120v, v gs =0v i dss - - -10 a v ds =-120v, v gs =0, tj=125 c - 650 800 i d =-1.6a, v gs =-10v r ds(on) (note 1) - 700 910 m i d =-1a, v gs =-6v g fs (note 1) - 2.6 - s v ds =-10v, i d =-1.4a dynamic ciss - 478 - coss - 28 - crss - 12 - pf v ds =-30v, v gs =0, f=1mhz t d(on) (note 1&2) - 8 - t r (note 1&2) - 6 - t d(off) (note 1&2) - 20 - t f (note 1&2) - 4 - ns v ds =-75v, i d =-1a, v gs =-10v, r g =1 qg (note 1&2) - 6 - qgs (note 1&2) - 2 - qgd (note 1&2) - 1.4 - nc v ds =-75v, i d =-1a, v gs =-10v
cystech electronics corp. spec. no. : c896q8 issued date : 2013.07.05 revised date : 2013.11.07 page no. : 3/9 MTEF1P15Q8 cystek product specification electrical characteristics(cont.) (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions source-drain diode i s - - -1.6 i sm (note 3) - - -6.4 a v sd (note 1) - -0.78 -1.2 v i s =-1.6a, v gs =0v trr - 60 - ns qrr - 120 - nc i f =-1a, di f /dt=100a/ s note : 1.pulse test : pulse width 300 s, duty cycle 2% 2.independent of operating temperature 3.pulse width li mited by maximum j unction temperature
cystech electronics corp. spec. no. : c896q8 issued date : 2013.07.05 revised date : 2013.11.07 page no. : 4/9 MTEF1P15Q8 cystek product specification typical characteristics typical output characteristics 0.0 0.8 1.6 2.4 3.2 4.0 4.8 5.6 6.4 024681 0 typical output characteristics 0.0 0.8 1.6 2.4 3.2 4.0 4.8 5.6 6.4 024681 -v ds , drain-source voltage(v) -i d , drain current (a) 0 -10v, -9v, -8v, -7v, -6v -5v v gs =-4v tj=0c -5.2v -v ds , drain-source voltage(v) -i d , drain current (a) -10v, -9v, -8v, -7v, -6v -5v tj=25c v gs =-4v static drain-source on-state resistance vs drain current 100 1000 10000 0.1 1 10 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-6v v gs =-4.5v v gs =-10v source drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 04812162 -i s , source drain current(a) -v sd , source-drain voltage(v) 0 v gs =0v tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 600 650 700 750 800 850 900 950 1000 024681 0 normalized drain-source on-state resistance vs junction tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds( on) , normalized static drain- source on-state resistance v gs =-10v, i d =-1.4a r ds( on) @tj=25c : 645m typ. -v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =-1.4a
cystech electronics corp. spec. no. : c896q8 issued date : 2013.07.05 revised date : 2013.11.07 page no. : 5/9 MTEF1P15Q8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss normalized threshold voltage vs junction tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs( th) , normalized threshold voltage i d =-250 a i d =-1ma forward transfer admittance vs drain current 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance(s) v ds =-10v pulsed t a =25c gate charge characteristics 0 2 4 6 8 10 02468 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-100v i d =-1a v ds =-75v v ds =-50v maximum safe operating area 0.01 0.1 1 10 0.1 1 10 100 1000 -i d , drain-source voltage(v) -i d , drain current(a) dc 10ms 100ms 1ms 100 s t a =25c, tj=150c, v gs =-10v ja =40c/w, single pulse 1s maximum drain current vs junction temperature 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-10v
cystech electronics corp. spec. no. : c896q8 issued date : 2013.07.05 revised date : 2013.11.07 page no. : 6/9 MTEF1P15Q8 cystek product specification typical characteristics(cont.) single pulse power rating, junction to ambient (note on page 2) 0 50 100 150 200 250 300 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j( max) =150c t a =25c ja =40c/w typical transfer characteristics 0.0 0.8 1.6 2.4 3.2 4.0 4.8 5.6 6.4 0246 -v gs , gate-source voltage(v) -i d , drain current(a) 8 v ds =-10v transient thermal response curves 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , square wave pulse duration(s) r(t), normalized transient thermal resistance d=0.5 0.2 1.r ja (t)=r(t)*r ja 2.duty factor, d=t1/t2 3.t jm -t a =p dm *r ja (t) 4.r ja =40c/w 0.1 0.05 0.02 0.01 single pulse normalized brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs = 0v
cystech electronics corp. spec. no. : c896q8 issued date : 2013.07.05 revised date : 2013.11.07 page no. : 7/9 MTEF1P15Q8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c896q8 issued date : 2013.07.05 revised date : 2013.11.07 page no. : 8/9 MTEF1P15Q8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c896q8 issued date : 2013.07.05 revised date : 2013.11.07 page no. : 9/9 MTEF1P15Q8 cystek product specification sop-8 dimension marking: *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1850 0.2007 4.70 5.10 g 0.0531 0.0689 1.35 1.75 b 0.1496 0.1575 3.80 4.00 h 0.1889 0.2007 4.80 5.10 c 0.2283 0.2441 5.80 6.20 i 0.0019 0.0098 0.05 0.25 d 0.0500* 1.27 * j 0.0157 0.0500 0.40 1.27 e 0.0130 0.0201 0.33 0.51 k 0.0067 0.0098 0.17 0.25 f 0.1472 0.1527 3.74 3.88 l 0.0531 0.0610 1.35 1.55 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . 8-lead sop-8 plastic package cystek packa g e code: q8 date code ef1 p15 device name
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